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EIB1718A-1P - 17.3-18.7GHz 1W Internally Matched Power FET

Download the EIB1718A-1P datasheet PDF. This datasheet also covers the EIA1718B-1P variant, as both devices belong to the same 17.3-18.7ghz 1w internally matched power fet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • HIGH PAE( 25%.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (EIA1718B-1P_ExcelicsSemiconductor.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number EIB1718A-1P
Manufacturer Excelics Semiconductor
File Size 47.32 KB
Description 17.3-18.7GHz 1W Internally Matched Power FET
Datasheet download datasheet EIB1718A-1P Datasheet

Full PDF Text Transcription for EIB1718A-1P (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for EIB1718A-1P. For precise diagrams, and layout, please refer to the original PDF.

Excelics • • • • • • EIA/EIB1718A-1P 17.3-18.1GHz, 1W Internally Matched Power FET PRELIMINARY DATA SHEET 17.3-18.1GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 ...

View more extracted text
SHEET 17.3-18.1GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM EIA FEATURES HIGH PAE( 25% TYPICAL) EIB FEATURES HIGH IP3(43dBm TYPICAL) +30.5/+29.5dBm TYPICAL P1dB OUTPUT POWER FOR EIA/EIB 7.5/6.0dB TYPICAL G1dB POWER GAIN FOR EIA/EIB NON-HERMETIC METAL FLANGE PACKAGE ELECTRICAL CHARACTERISTICS (Ta = 25 OC) EIA1718A-1P SYMBOLS PARAMETERS/TEST CONDITIONS Output Power at 1dB Compression f=17.3-18.1GHz Vds=8V, Idsq=0.5 Idss(EIA), 0.6Idss(EIB) Gain at 1dB Compression f=17.3-18.1GHz Vds=8V, Idsq=0.5 Idss(EIA), 0.6Idss(EIB) Power Added Efficiency at 1dB compression f=17.3-18.1GHz Vds=8V, Idsq=0.5 Idss(EIA), 0.

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